Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SQ2301ES-T1_GE3
MOSFET P-CH 20V 3.9A TO236
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.43
- Stock
- 3497
- Description
- MOSFET P-CH 20V 3.9A TO236
Product Details
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 7A, 10V
- Series
- -
- Power Dissipation (Max)
- 660mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- U-DFN2020-6 (Type E)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1241pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.8A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)