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Vishay / Siliconix SQ2303ES-T1_GE3
MOSFET P-CHAN 30V SOT23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 11695
Product Details
- Package / Case
- SC-96
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 160mOhm @ 1.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 540mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- TSMT3
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 6.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 230pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.5A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount