Vishay / Siliconix SQ2315ES-T1_GE3

Product Details

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

15.8nC @ 4.5V

Vgs (Max)

±5V

Drain to Source Voltage (Vdss)

8V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1070pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

17mOhm @ 7.2A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

2.5W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-23