Vishay / Siliconix SQ2362ES-T1_GE3

Product Details

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

73mOhm @ 8A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

8W (Tc)

FET Type

N-Channel

Supplier Device Package

SC-73

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

584pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount