Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SQ2364EES-T1_GE3
MOSFET N-CHAN 60V SOT-23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.6
- Stock
- 16
- Description
- MOSFET N-CHAN 60V SOT-23
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-1210, 8-LFPAK33
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 37mOhm @ 5A, 10V
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 44W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK33
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.3nC @ 5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 867pF @ 25V