Vishay / Siliconix SQ2389ES-T1_GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

454pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

14.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

6-WDFN Exposed Pad

Vgs(th) (Max) @ Id

3.8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

59mOhm @ 5A, 10V

Series

NexFET™

Power Dissipation (Max)

2.5W (Ta), 20.2W (Tc)

FET Type

N-Channel

Supplier Device Package

6-WSON (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V