Vishay / Siliconix SQ3425EV-T1_GE3

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

401pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

TO-261-4, TO-261AA

Base Part Number

DMN10H22

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

-

Rds On (Max) @ Id, Vgs

220mOhm @ 1.6A, 10V

FET Type

N-Channel

Power Dissipation (Max)

1.8W (Ta)

Packaging

Digi-Reel®

Supplier Device Package

SOT-223

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V