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Vishay / Siliconix SQ3460EV-T1_GE3
MOSFET N-CH 20V 8A 6TSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 20V 8A 6TSOP
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 5W (Ta), 39W (Tc)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 310nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 9080pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.2mOhm @ 15A, 10V