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Vishay / Siliconix SQD100N03-3M2L_GE3
MOSFET N-CH 30V 100A TO252AA
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 1990
- Description
- MOSFET N-CH 30V 100A TO252AA
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-4, DPak (3 Leads + Tab)
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.8mOhm @ 20A, 10V
- Series
- Automotive, AEC-Q101, TrenchFET®
- Power Dissipation (Max)
- 136W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-PAK (TO-252)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 105nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6700pF @ 25V