Vishay / Siliconix SQD10N30-330H_GE3

Product Details

Rds On (Max) @ Id, Vgs

3.5mOhm @ 30A, 10V

Series

-

Power Dissipation (Max)

890mW (Ta), 62.5W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

52nC @ 11.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 130A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN, 5 Leads

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)