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Vishay / Siliconix SQD19P06-60L_GE3
MOSFET P-CH 60V 20A TO252
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 7751
- Description
- MOSFET P-CH 60V 20A TO252
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 58nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5250pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 40A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.4V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.6mOhm @ 21A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PQFN (5x6)