Vishay / Siliconix SQD50N06-09L_GE3

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

250V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

65mOhm @ 25.5A, 10V

Series

-

Power Dissipation (Max)

1.56W (Ta), 40W (Tc)

FET Type

N-Channel

Supplier Device Package

LPTS

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V