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Vishay / Siliconix SQD50P04-09L_GE3
MOSFET P-CH 40V 50A
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 1957
- Description
- MOSFET P-CH 40V 50A
Product Details
- Operating Temperature
- 150°C (TJ)
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 210mOhm @ 8.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.8W (Ta), 110W (Tc)
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- PowerFlat™ (8x8) HV
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1345pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 15A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL22
- Vgs(th) (Max) @ Id
- 5V @ 250µA