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Vishay / Siliconix SQJ200EP-T1_GE3
MOSFET 2N-CH 20V 20A/60A PPAK SO
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2027
Product Details
- Series
- Automotive, AEC-Q101, TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 18.5nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 714pF @ 30V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 23.5A (Tc)
- Part Status
- Active
- Power - Max
- 42W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TA)
- Rds On (Max) @ Id, Vgs
- 33.6mOhm @ 4.8A, 10V
- Supplier Device Package
- PowerPAK® SO-8 Dual