Vishay / Siliconix SQJ262EP-T1_GE3

Product Details

FET Type

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Packaging

Cut Tape (CT)

Drain to Source Voltage (Vdss)

25V

FET Feature

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds

585pF @ 12.5V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

4.5A

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

12-UFBGA, DSBGA

Base Part Number

CSD86311

Vgs(th) (Max) @ Id

1.4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

39mOhm @ 2A, 8V

Series

NexFET™

Supplier Device Package

12-DSBGA