Vishay / Siliconix SQJ402EP-T1_GE3

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

26.6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

1.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.2mOhm @ 18A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

3W (Ta), 6.6W (Tc)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 10V