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Vishay / Siliconix SQJ412EP-T1_GE3
MOSFET N-CH 40V 32A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5465
- Description
- MOSFET N-CH 40V 32A PPAK SO-8
Product Details
- Rds On (Max) @ Id, Vgs
- 360mOhm @ 3A, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 59.5W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 16.4nC @ 10V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 517pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 3.5V @ 150µA
- Operating Temperature
- -40°C ~ 150°C (TJ)