Vishay / Siliconix SQJ415EP-T1_GE3

Product Details

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

4V @ 200µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

7.5mOhm @ 13A, 10V

Series

U-MOSVIII-H

Power Dissipation (Max)

700mW (Ta), 42W (Tc)

FET Type

N-Channel

Supplier Device Package

8-TSON Advance (3.3x3.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6.5V, 10V