Vishay / Siliconix SQJ423EP-T1_GE3

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.5V @ 150µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

360mOhm @ 3A, 10V

Series

CoolMOS™ P7

Power Dissipation (Max)

59.4W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

16.4nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

700V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

517pF @ 400V