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Vishay / Siliconix SQJ960EP-T1_GE3
MOSFET 2N-CH 60V 8A
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.94
- Stock
- 875
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 7A, 10V
- Supplier Device Package
- PowerPAK® 1212-8SCD
- Series
- TrenchFET® Gen IV
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 1290pF @ 30V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 14A (Ta), 52A (Tc)
- Part Status
- Active
- Power - Max
- 5.2W (Ta), 69.4W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8SCD
- Vgs(th) (Max) @ Id
- 3V @ 250µA