Vishay / Siliconix SQJA04EP-T1_GE3

Product Details

Series

NexFET™

Power Dissipation (Max)

3.1W (Ta), 36W (Tc)

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9.7mOhm @ 8A, 10V