Vishay / Siliconix SQJA64EP-T1_GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-XFBGA, WLCSP

Vgs(th) (Max) @ Id

900mV @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 4.5V

Series

-

Power Dissipation (Max)

556mW (Ta), 12.5W (Tc)

FET Type

P-Channel

Supplier Device Package

6-WLCSP (1.48x.98)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

29.4nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V