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Vishay / Siliconix SQJQ100E-T1_GE3
MOSFET N-CH 40V 200A POWERPAK8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.73
- Stock
- 100
- Description
- MOSFET N-CH 40V 200A POWERPAK8
Product Details
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 96W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- I2PAK
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 22.9nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1730pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 58A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13mOhm @ 15A, 10V