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Vishay / Siliconix SQM110N05-06L_GE3
MOSFET N-CH 55V 110A TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 800
- Description
- MOSFET N-CH 55V 110A TO263
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- MDmesh™
- Rds On (Max) @ Id, Vgs
- 1.15Ohm @ 2.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 60W (Tc)
- Packaging
- Tube
- Supplier Device Package
- IPAK (TO-251)
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 270pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 5A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number
- STU7N
- Vgs(th) (Max) @ Id
- 4V @ 250µA