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Vishay / Siliconix SQM120P10_10M1LGE3
MOSFET P-CH 100V 120A TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 548
- Description
- MOSFET P-CH 100V 120A TO263
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4mOhm @ 20A, 10V
- Series
- -
- Power Dissipation (Max)
- 3.1W (Ta), 110W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 75nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4550pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 35A (Ta), 210A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN, 5 Leads
- Vgs(th) (Max) @ Id
- 2V @ 250µA