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Vishay / Siliconix SQM50N04-4M1_GE3
MOSFET N-CH 40V 50A TO-263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 800
- Description
- MOSFET N-CH 40V 50A TO-263
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 120V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3100pF @ 60V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 42A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.4mOhm @ 21A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 35W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220SIS
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 52nC @ 10V