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Vishay / Siliconix SQS411ENW-T1_GE3

MOSFET P-CH 40V PPAK 1212-8W

Manufacturer
Vishay / Siliconix
Datasheet
Price
0.76
Stock
3050
Description
MOSFET P-CH 40V PPAK 1212-8W

Product Details

Operating Temperature
-55°C ~ 150°C (TJ)
Series
SuperMESH™
Rds On (Max) @ Id, Vgs
15Ohm @ 400mA, 10V
FET Type
N-Channel
Power Dissipation (Max)
2W (Tc)
Packaging
Digi-Reel®
Supplier Device Package
8-SO
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
6.9nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
94pF @ 25V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
250mA (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Part Number
STS1
Vgs(th) (Max) @ Id
4.5V @ 50µA