Vishay / Siliconix SQS460EN-T1_GE3

Product Details

Series

HEXFET®

Power Dissipation (Max)

48W (Tc)

FET Type

N-Channel

Supplier Device Package

IPAK (TO-251)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Last Time Buy

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

24.5mOhm @ 18A, 10V