Vishay / Siliconix SQS966ENW-T1_GE3

Product Details

FET Feature

Standard

Current - Continuous Drain (Id) @ 25°C

5.2A (Ta)

Part Status

Active

Power - Max

2W (Ta)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

85mOhm @ 5.2A, 10V

Supplier Device Package

8-SOP

Series

-

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 5V

FET Type

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

40V

Packaging

Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V