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Vishay / Siliconix SUD19N20-90-E3
MOSFET N-CH 200V 19A DPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.33
- Stock
- 4000
Product Details
- Vgs (Max)
- +5.75V, -4V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 415pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 3mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 11A, 5V
- Series
- Automotive, AEC-Q101, eGaN®
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- Die Outline (6-Solder Bar)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 4nC @ 5V