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Vishay / Siliconix SUD20N10-66L-GE3
MOSFET N-CH 100V 16.9A TO-252
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 100V 16.9A TO-252
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8840pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8S
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Operating Temperature
- -50°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 20A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 4.8W (Ta), 57W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® 1212-8S (3.3x3.3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 300nC @ 10V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V