Vishay / Siliconix SUM50P10-42-E3

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16.3A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

13.8mOhm @ 6A, 10V

Series

TrenchFET®

Power Dissipation (Max)

3.1W (Ta), 73.5W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB