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WeEn Semiconductors BYV29FB-600,118
DIODE GEN PURP 600V 9A D2PAK
- Manufacturer
- WeEn Semiconductors
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Series
- CoolSiC™+
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 1.8V @ 10A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3 Variant
- Capacitance @ Vr, F
- 250pF @ 1V, 1MHz
- Supplier Device Package
- PG-TO247HC-3
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 120µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 5A (DC)