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WeEn Semiconductors BYV30X-600PQ
DIODE GEN PURP 600V 30A TO220F
- Manufacturer
- WeEn Semiconductors
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Capacitance @ Vr, F
- 130pF @ 1V, 1MHz
- Supplier Device Package
- D2PAK
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 170µA @ 650V
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 4A
- Series
- -
- Operating Temperature - Junction
- 175°C (Max)
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 1.7V @ 4A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB