Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH30N65C3

IGBT 650V 60A 270W TO247AD

3.07

IXYS IXGA28N60A3

IGBT

3.07

IXYS IXGP12N100A

IGBT 1000V 24A 100W TO220AB

3.07

ON Semiconductor FGH40T65SPD-F085

AUTOMOTIVE 650V FS GEN3

3.43

Infineon Technologies IHW25N120R2FKSA1

IGBT 1200V 50A 365W TO247-3

3.43

Global Power Technologies Group GPA040A120L-ND

IGBT 1200V 80A 455W TO264

3.38

ON Semiconductor FGH40N65UFDTU-F085

IGBT 650V 40A 290W TO247

3.65

Global Power Technologies Group GPA040A120L-FD

IGBT 1200V 80A 480W TO264

3.64