Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT65GP60B2G

IGBT 600V 100A 833W TMAX

21.39

Microsemi Corporation APT50GT120B2RG

IGBT 1200V 94A 625W TO247

16.64

Microsemi Corporation APT75GN120LG

IGBT 1200V 200A 833W TO264

16.58

STMicroelectronics STGYA120M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

11.03

STMicroelectronics STGW40H120DF2

IGBT 1200V 40A HS TO-247

10.25

ON Semiconductor FGL35N120FTDTU

IGBT 1200V 70A 368W TO264

10

IXYS IXGH30N120B3D1

IGBT 1200V 300W TO247AD

9.07

Infineon Technologies IKW75N60H3FKSA1

IGBT 600V 80A 428W TO247-3

8.88