Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

ON Semiconductor HGTG30N60A4D

IGBT 600V 75A 463W TO247

5.75

Infineon Technologies IKW15N120H3FKSA1

IGBT 1200V 30A 217W TO247-3

5.55

ON Semiconductor NGTB25N120FL3WG

IGBT 1200V 100A TO247

5.49

Infineon Technologies IGW75N65H5XKSA1

IGBT TRENCH 650V 120A TO247-3

5.49

ON Semiconductor FGH75T65SQD-F155

IGBT 650V 150A 375W TO247

5.29

Infineon Technologies IKW50N65H5FKSA1

IGBT 650V 80A 305W PG-TO247-3

5.17

ON Semiconductor HGTG30N60A4

IGBT 600V 75A 463W TO247

5.09

ON Semiconductor FGL60N100BNTD

IGBT 1000V 60A 180W TO264

4.99