Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor HGTP3N60A4D

IGBT 600V 17A 70W TO220AB

1.41

ON Semiconductor NGTD17T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

1.4

Infineon Technologies IGB30N60TATMA1

IGBT 600V 60A 187W TO263-3-2

1.59

ON Semiconductor NGTB50N60SWG

IGBT 600V 50A TO247

1.57

ON Semiconductor NGTB45N60SWG

IGBT 600V 45A TO-247

1.57

Infineon Technologies IRGS6B60KDTRLP

IGBT 600V 13A 90W D2PAK

0

Infineon Technologies IRGS6B60KDTRRP

IGBT 600V 13A 90W D2PAK

1.71

Infineon Technologies IRG4BC30UDPBF

IGBT 600V 23A 100W TO220AB

1.92