Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation 2224-6L

RF TRANS NPN 40V 2.4GHZ 55LV

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Microsemi Corporation 1517-20M

RF TRANS NPN 65V 1.65GHZ 55LV-1

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Microsemi Corporation UTV8100B

RF TRANS NPN 60V 860MHZ 55RT

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Microsemi Corporation TAN15

RF TRANS NPN 50V 1.215GHZ 55LT

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Microsemi Corporation MS2202

RF TRANS NPN 3.5V 1.15GHZ M115

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Microsemi Corporation MDS150

RF TRANS NPN 60V 1.09GHZ 55AW

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Microsemi Corporation MS2422

RF TRANS NPN 65V 1.215GHZ M138

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Microsemi Corporation MS2421

RF TRANS NPN 65V 1.15GHZ M103

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