Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFQ790H6327XTSA1

RF TRANS NPN 6.1V 1.85GHZ SOT89

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Infineon Technologies BFR740L3RHE6327XTSA1

RF TRANS NPN 4.7V 42GHZ TSLP-3

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Infineon Technologies BFP640H6327XTSA1

RF TRANS NPN 4.5V 40GHZ SOT343-4

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Infineon Technologies BFR360FH6327XTSA1

RF TRANS NPN 9V 14GHZ TSFP-3

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Toshiba Semiconductor and Storage 2SC5086-O,LF

RF TRANS NPN 12V 7GHZ SSM

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Infineon Technologies BF888H6327XTSA1

MOSFET N-CH RF 12V 30MA SOT-343

0.19

Infineon Technologies BF886H6327XTSA1

MOSFET N-CH RF 12V 30MA SOT-343

0.17

Panasonic Electronic Components DMC904F00R

TRANSISTOR NPN 20V SSMINI6-F3-B

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