Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
ON Semiconductor MMBT918LT1
RF TRANS NPN 15V 600MHZ SOT23-3
0
ON Semiconductor MPSH10RLRA
RF TRANS NPN 25V 650MHZ TO92-3
0
ON Semiconductor MMBTH10LT1
RF TRANS NPN 25V 650MHZ SOT23-3
0
ON Semiconductor MPSH17
RF TRANS NPN 15V 800MHZ TO92-3
0
NXP USA Inc. MBC13900T1
RF TRANS NPN 6.5V 15GHZ SOT343
0
Infineon Technologies BFT92E6327
RF TRANS PNP 15V 5GHZ SOT23-3
0
Infineon Technologies BFP520E6327BTSA1
RF TRANS NPN 3.5V 45GHZ SOT343-4
0
Infineon Technologies BFP450E6327BTSA1
RF TRANS NPN 5V 24GHZ SOT343-4
0