Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


ON Semiconductor 2N5770

RF TRANS NPN 15V TO92-3

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NXP USA Inc. BFG591,115

RF TRANS NPN 15V 7GHZ SOT223

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NXP USA Inc. BFR93A,215

RF TRANS NPN 12V 6GHZ TO236AB

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NXP USA Inc. BFR93A,235

RF TRANS NPN 12V 6GHZ TO236AB

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NXP USA Inc. BFG21W,115

RF TRANS NPN 4.5V 18GHZ CMPAK-4

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NXP USA Inc. BFG310W/XR,115

RF TRANS NPN 6V 14GHZ CMPAK-4

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NXP USA Inc. BFG424F,115

RF TRANS NPN 4.5V 25GHZ 4SO

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NXP USA Inc. BFG520W/X,115

RF TRANS NPN 15V 9GHZ 4SO

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