Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


NXP USA Inc. BFT92W,115

RF TRANS PNP 15V 4GHZ SOT323-3

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NXP USA Inc. BFT93,215

RF TRANS PNP 12V 5GHZ TO236AB

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NXP USA Inc. BFG480W,115

RF TRANS NPN 4.5V 21GHZ CMPAK-4

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NXP USA Inc. BFG480W,135

RF TRANS NPN 4.5V 21GHZ CMPAK-4

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NXP USA Inc. BFG97,115

RF TRANS NPN 15V 5.5GHZ SOT223

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NXP USA Inc. BFR540,235

RF TRANS NPN 15V 9GHZ TO236AB

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NXP USA Inc. BFG325W/XR,115

RF TRANS NPN 6V 14GHZ CMPAK-4

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NXP USA Inc. BFG410W,115

RF TRANS NPN 4.5V 22GHZ CMPAK-4

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