Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Diodes Incorporated MMBTH10-7
RF TRANS NPN 25V 650MHZ SOT23-3
0.48
Diodes Incorporated ZUMTS17NTA
RF TRANS NPN 11V 3.2GHZ SOT323
0
NXP USA Inc. PBR941B,215
RF TRANS NPN 10V 9GHZ TO236AB
0
ON Semiconductor 2SC5226A-4-TL-E
RF TRANS NPN 10V 7GHZ 3MCP
0
NXP USA Inc. BFU520R
RF TRANS NPN 12V 10.5GHZ SOT143B
0
ON Semiconductor MMBTH10RG
RF TRANS NPN 40V 450MHZ SOT23-3
0
Micro Commercial Co MMBTH10-TP
RF TRANS NPN 25V 650MHZ SOT23
0
ON Semiconductor 2SC5347AE-TD-E
RF TRANS NPN 12V 4.7GHZ PCP
0