Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH17N100A

IGBT 1000V 34A 150W TO247AD

5.75

Infineon Technologies IRG7PH35UD-EP

IGBT 1200V 50A COPAK247

5.72

Infineon Technologies IGC27T120T8LX1SA2

IGBT 1200V 25A DIE

6.05

IXYS IXYH75N65C3

IGBT 650V 170A 750W TO247

6.03

IXYS IXGH48N60C3D1

IGBT 600V 75A 300W TO247AD

6.03

IXYS IXGA20N120B

IGBT 1200V 40A 150W TO263

6.52

STMicroelectronics STGWA40H120F2

IGBT BIPO 1200V 40A TO247-3

6.51

IXYS IXXH40N65B4H1

IGBT 650V 120A 455W TO247AD

6.5