Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IGC36T120T8LX1SA1

IGBT 1200V 35A DIE

7.2

Microsemi Corporation APT50GN60BDQ2G

IGBT 600V 107A 366W TO247

7.18

IXYS IXGH28N90B

IGBT 900V 51A 200W TO247AD

7.75

IXYS IXBT6N170

IGBT 1700V 12A 75W TO268

7.75

Microsemi Corporation APT70GR65B

IGBT 650V 134A 595W TO-247

7.71

Infineon Technologies IKFW90N60EH3XKSA1

INDUSTRY 14

8.37

Microsemi Corporation APT70GR65B2DU40

INSULATED GATE BIPOLAR TRANSISTO

8.3

IXYS IXGR50N90B2D1

IGBT 900V 40A 100W ISOPLUS247

8.29