Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS MMIX1X340N65B4

MOSFET N-CH

0.2

IXYS IXGF20N300

IGBT 3000V 22A 100W I4-PAK

0.2

IXYS IXBT20N300

IGBT 3000V 50A 250W TO268

0.2

IXYS MMIX1X200N60B3

IGBT 600V 223A 625W SMPD

0.2

IXYS IXYT30N450HV

IGBT

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IXYS IXYN150N60B3

IGBT

0.2

IXYS IXGF20N250

IGBT 2500V 23A 100W I4-PAK

0.2

IXYS IXGX100N170

IGBT 1700V 170A 830W PLUS247

0.2