Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK120N120B3

IGBT 1200V 200A 830W TO264

0.2

IXYS IXXK300N60C3

IGBT 600V 510A 2300W TO264

0.2

IXYS IXXK300N60B3

IGBT 600V 550A 2300W TO264

0.2

IXYS IXXX300N60C3

IGBT 600V 510A 2300W TO247

0.2

IXYS IXYX120N120B3

IGBT

0.2

IXYS IXYN75N65C3D1

IGBT

0.2

IXYS IXBA16N170AHV

REVERSE CONDUCTING IGBT

20.47

IXYS MMIX1X100N60B3H1

IGBT 600V 145A 400W SMPD

0.2