Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGF32N170

IGBT 1700V 44A 200W I4PAC

0.2

Microsemi Corporation APT50GT120LRDQ2G

IGBT 1200V 106A 694W TO264

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IXYS IXXX200N60B3

IGBT

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IXYS IXBH28N170A

IGBT 1700V 30A 300W TO247AD

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IXYS IXYH8N250CHV

IGBT

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IXYS IXYH8N250CV1HV

IGBT 2500V 29A TO247HV

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IXYS IXGK55N120A3H1

IGBT 1200V 125A 460W TO264

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IXYS IXGT32N170

IGBT 1700V 75A 350W TO268

0.2