Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK50N120C3H1

IGBT 1200V 95A 460W TO264

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IXYS IXGT40N120B2D1

IGBT 1200V 75A 380W TO268

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IXYS IXYX100N65B3D1

IGBT 650V 188A 1150W PLUS247

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Microsemi Corporation APT75GN120B2G

IGBT 1200V 200A 833W TMAX

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IXYS IXGX35N120BD1

IGBT 1200V 70A 350W PLUS247

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IXYS IXGR35N120B

IGBT 1200V 70A 200W ISOPLUS247

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IXYS IXGK35N120BD1

IGBT 1200V 70A 350W TO264AA

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IXYS IXA30RG1200DHG-TUB

IGBT PHASELEG 1200V 30A SMPD

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